December 13, 2002
News Release 02-114
Inv. No. 701-TA-431 (P)


The United States International Trade Commission (ITC) today determined that there is a reasonable indication that a U.S. industry is materially injured by reason of imports of DRAMs and DRAM modules from Korea that are allegedly subsidized.

Chairman Deanna Tanner Okun, Vice Chairman Jennifer A. Hillman, and Commissioners Lynn M. Bragg and Stephen Koplan made affirmative determinations. Commissioner Marcia E. Miller did not participate in this investigation.

As a result of the Commission's affirmative determination, the U.S. Department of Commerce will continue to conduct its countervailing duty investigation of imports of DRAMs and DRAM modules from Korea, with its preliminary determination due on or about January 27, 2003.

The Commission's public report DRAMs and DRAM Modules from Korea (Investigation No. 701-TA-431 (Preliminary), USITC Publication 3569, December 2002) will contain the views of the Commission and information developed during the investigation.

Copies of the report are expected to be available after January 13, 2002, by calling 202-205-1809 or from the Office of the Secretary, 500 E Street SW, Washington, DC 20436. Requests may also be faxed to 202-205-2104.

Office of Industries
Washington, DC 20436


DRAMs and DRAM Modules from Korea
Investigation No. 701-TA-431 (Preliminary)

Product Description: The imported products subject to this investigation are dynamic random access memory semiconductors ("DRAMs") of various types from Korea, whether assembled or unassembled. Assembled DRAMs include all package types. Unassembled DRAMs include processed wafers, uncut die, and cut die. Also included are memory modules containing DRAMs from Korea. A memory module is a collection of DRAMs, the sole function of which is memory. Memory modules include single in-line processing modules ("SIPs"), single in-line memory modules ("SIMMs"), dual in-line memory modules ("DIMMs"), small outline dual in-line memory modules ("SODIMMs"), Rambus in-line memory modules ("RIMMs"), and memory cards or other collections of DRAMs, whether unmounted or mounted on a circuit board. Also included are video random access memory ("VRAM"), and synchronous graphics RAM ("SGRAM"), as well as various types of DRAMs, including fast page-mode ("FPM"), extended data-out ("EDO"), burst extended data-out ("BEDO"), synchronous dynamic RAM ("SDRAM"), Rambus DRAM ("RDRAM"), and Double Data Rate DRAM ("DDR DRAM"). DRAMs and DRAM modules are used as the main memory in a variety of electronics products including computers and computer peripherals, telecommunications equipment, networking equipment, and consumer electronics devices. By far, the largest end use for DRAMs and DRAM modules is computer equipment.

Status of Proceedings:
1. Type of investigation: Preliminary countervailing.
2. Petitioner: Micron Technology, Inc., Boise, ID.
3. Preliminary investigation instituted by the USITC: November 1, 2002.
4. Commission's conference: November 22, 2002.
5. USITC vote: December 13, 2002.
6. USITC determination to the U.S. Department of Commerce: December 16, 2002.

U.S. Industry:
1. Number of producers in 2001: 8.
2. Location of producers' plants: Manassas, VA; Gresham, OR; Eugene, OR; Essex Junction, VT;
     Sandston, VA; Boise, ID; Roseville, CA; Austin, TX.
3. Employment of production and related workers in 2001: (1)
4. Apparent U.S. consumption in 2001: (1)
5. Ratio of the value of total U.S. shipments of imports to total U.S. consumption in 2001: (1)

U.S. Imports:
1. From the subject country during 2001: (1)
2. From other countries during 2001: (1)
3. Leading source during 2001:  Korea.

(1) Withheld to avoid disclosure of business proprietary information.

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